| 摘要 |
A method of manufacturing a radiation detector, comprising: a charge blocking layer generating step of generating a charge blocking layer on a substrate; a CdTe-layer generating step of generating a CdTe layer so as to cover the charge blocking layer on the substrate, the CdTe layer undergoing heterojunction to the charge blocking layer and being composed of a chlorine-doped polycrystalline film; and a heat treatment step of performing a heat treatment on the substrate having the CdTe layer formed thereon. |
