| 摘要 |
PROBLEM TO BE SOLVED: To relax concentration of injection charge to inhibit breakage of an element.SOLUTION: A semiconductor device comprises a p-type deep layer 18 which has contact with a p-type high-impurity layer 10 and a p-type column 4a and which is arranged so as to overlap between an end P1 to an end of the p-type high-impurity layer 10 when viewed from above the semiconductor device. In addition, a p-type impurity concentration of the p-type deep layer 18 is made higher than that of a p-type layer 5 and lower than that of the p-type high-impurity layer 10. By providing such p-type deep layer 18, concentration of injection charge at the time of a recovery operation can be relaxed and breakage of an element can be inhibited. |
