发明名称 電子装置及びその製造方法
摘要 PROBLEM TO BE SOLVED: To provide an electronic apparatus with high reliability by suppressing instability of an interface state from being caused and a parasitic capacitance from being generated as much as possible and securing a sufficient withstand pressure.SOLUTION: A semiconductor device comprises layer structures 1, 2, and a capacitor provided in a capacitor groove 11 formed in the layer structures 1, 2. The capacitor includes a lower electrode 13 covering the capacitor groove 11 from one side surface to a bottom surface, a capacitor insulating body 14 configured to fill in the capacitor groove 11 via the lower electrode 13, and an upper electrode 15 formed on the capacitor insulating body 14 so as to be separated from the lower electrode 13.
申请公布号 JP6060669(B2) 申请公布日期 2017.01.18
申请号 JP20120277213 申请日期 2012.12.19
申请人 富士通株式会社 发明人 倉橋 菜緒子
分类号 H01L21/822;H01L21/205;H01L21/338;H01L21/8234;H01L27/04;H01L27/06;H01L27/095;H01L29/778;H01L29/812 主分类号 H01L21/822
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