发明名称 |
METHOD OF MAKING NAND FLASH MEMORY |
摘要 |
A NAND flash memory chip includes wide openings in an inter-poly dielectric layer through which gaps are later etched to define structures such as select gates. Such select gates are asymmetric, with inter-poly dielectric on a side adjacent to a memory cell and no inter-poly dielectric on a side away from a memory cell. Gaps etched through such openings may also define peripheral devices. |
申请公布号 |
EP2888763(B1) |
申请公布日期 |
2017.01.18 |
申请号 |
EP20130750456 |
申请日期 |
2013.08.07 |
申请人 |
SanDisk Technologies LLC |
发明人 |
SEL, Jongsun;PHAM, Tuan;TOKUNAGA, Kazuya;KINOSHITA, Hiro |
分类号 |
H01L27/115;G11C16/04;H01L21/28;H01L29/66;H01L29/788 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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