| 摘要 |
A magnetic random access memory-based ternary content addressable memory cell (10), comprising: a first and second magnetic tunnel junction (2, 2'), each magnetic tunnel junction (2, 2') being formed from a storage layer (21), a sense layer (23), and an insulating layer between the storage layer (21) and the sense layer (23); a first and second straps (14, 14'), respectively connected to the first and second magnetic tunnel junction (2, 2'); a first and second selection transistors (6, 6'), respectively connected to one extremity of the first and second straps (14, 14'), allowing passing a heating current (31) selectively through the first and second magnetic tunnel junction (2, 2'), respectively; a first and second current lines (3, 3'), respectively connected to the other extremity of the first and second straps (14, 14'); and a first field tine (5) for passing at least a first write field current (51); wherein the cell (10) further comprises a conductive line (11) electrically connecting in series the first and second magnetic tunnel junctions (2, 2'). |
