| 摘要 |
A p-layer disposed on a surface layer of one of n - drift layers is separated into a p-base-region (5) and a floating p-region (6) by a plurality of trenches (4). A first gate electrode (9a) is disposed on a side wall of the trench (4) on the p-base-region (5) side via a first insulation film (8a), and a shield electrode (9b) is disposed on a side wall of the trench (4) on the floating p-region (6) side via a second insulation film (8b). Between the first gate electrode (9a) which is conductively connected to a gate runner (13) via a contact plug embedded in a first contact hole (10a) and the shield electrode (9b) which is conductively connected to an emitter electrode (11) via a contact plug embedded in a second contact hole (10b), an insulation film (20) which reaches from the front surface of the substrate to the bottom surface of the trench (4) is disposed. Hence, the fabrication process can be shortened, and a highly reliable semiconductor device with low switching loss can be provided. |
