POROUS-SILICON LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A light-emitting device (1), comprising: a semiconductor body (2), having a first conductivity type, with a front side (2a) and a back side (2b); a porous-silicon region (10), which extends in the semiconductor body (2) at the front side (2a); and a cathode region (8) in direct lateral contact with the porous-silicon region (10). The light-emitting device further comprises a barrier region (12) of electrically insulating material, which extends in direct contact with the cathode region (8) at the bottom side of the cathode region so that in use an electric current flows in the semiconductor body exclusively through lateral portions of the cathode region (8).