| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a fine pattern which reduces distortion and tilt in a longitudinal direction, and slant of a silicon dioxide convex stripe pattern formed by thermally oxidizing a silicon convex stripe pattern.SOLUTION: In a method of forming a fine pattern, grooves are formed on a silicon layer 1 by means of etching techniques to form a silicon convex stripe pattern 3 and a silicon concave stripe pattern 5. The silicon convex stripe pattern 3 includes cut-out sections 3a cut out in a longitudinal direction thereof. A thermal oxidization process is applied on the silicon layer 1 to produce a silicon dioxide convex stripe pattern 7 and a silicon dioxide concave stripe pattern 9 from the silicon convex stripe pattern 3 and the silicon concave stripe pattern 5. In the silicon dioxide convex stripe pattern 9, the silicon dioxide convex stripe pieces corresponding to the silicon convex stripe pieces that are adjacent to each other in the longitudinal direction are connected. |
