| 摘要 |
PROBLEM TO BE SOLVED: To suppress hump characteristics of a thin-film transistor having a top gate structure using polysilicon.SOLUTION: A display device includes: a gate electrode including a first side and a second side whose outer peripheries in a plan view face each other; a source electrode; a drain electrode; a semiconductor film including a first part that is provided in a lower part of the gate electrode and overlaps with the gate electrode in a plan view, a second part that is connected with the first part in a lower part of the first side and connected to the source electrode, and a third part that is connected with the first part in a lower part of the second side and connected to the drain electrode; and an insulating film that is provided between the gate electrode and semiconductor film. A part of an outer periphery of the semiconductor film, which overlaps with the gate electrode, connects the first side and second side and is not a line extending in the direction of an electric field from one to the other of the first side and second side. |
