| 摘要 |
A surface of a silicon carbide substrate on which a graphite layer is formed is covered with a metal layer which can form carbide. Then, the silicon carbide substrate is annealed to cause reaction between a metal in the metal layer which can form carbide and carbon in the graphite layer so as to change the graphite layer between the metal layer which can form carbide and the silicon carbide substrate to a metal carbide layer. Thus, the graphite layer is removed. The adhesion between the metal layer which can form carbide and the silicon carbide substrate can be improved so that separation of the metal layer which can form carbide can be suppressed. Graphite deposits can be suppressed due to the removal of the graphite layer so that separation of a wiring metal film formed on a surface of the metal layer which can form carbide can be suppressed. |
