| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for forming a protective film, from which a resist pattern capable of suppressing generation of development defects and film reduction and having excellent rectangularity of a cross-sectional shape can be formed in a process of forming a negative resist pattern by using immersion exposure and a developing solution containing an organic solvent.SOLUTION: The composition for forming a protective film is to be used in a process of forming a negative resist pattern using a developing solution that contains an organic solvent. The composition comprises [A] a polymer containing a fluorine atom and [B] a solvent. The [B] solvent includes at least one solvent selected from the group consisting of a linear ether solvent, a hydrocarbon solvent and an alcohol solvent having 5 or more carbon atoms. The [B] solvent preferably includes a linear ether solvent. The [B] solvent further preferably includes an alcohol solvent having 5 or more carbon atoms. The [B] solvent also preferably includes a linear ether solvent and an alcohol solvent having 5 or more carbon atoms. |
