SEMICONDUCTOR STORAGE DEVICE AND REDUNDANCY METHOD FOR SEMICONDUCTOR STORAGE DEVICE

摘要

A semiconductor memory device in which a memory block in which memory cells connected to global bit lines and global word lines are arranged in matrix constitutes a memory block column sharing global bit lines, the memory block column being developed in global word line wiring direction, wherein at least two of memory block columns adjoining each other constitute a to-be-remedied unit, and redundant block(s), which is/are arranged sharing global bit lines with the memory block column(s), which is/are provided in each to-be-remedied unit and number of redundant block(s) is/are smaller than that of memory block column(s) included in the to-be-remedied unit. The yield is enhanced with optimization of the manufacturing and circuits. A minimum number of redundant memory blocks necessary for defectiveness remedy can be provided. Redundancy remedy efficiency can be improved while minimizing increased chip die size of the semiconductor memory device.