Memory device with advanced refresh scheme

摘要

A memory device includes a counter suitable for counting the number of times that a periodic wave is enabled and generating a code, one or more memory banks each including a plurality of word lines, and one or more measurement blocks corresponding to the memory banks, respectively, and suitable for measuring an active period of an activated word line in a corresponding memory bank among the memory banks, wherein each of the measurement blocks measures the active period of the activated word line based on a first value of the code at an activation starting point of the corresponding memory bank and a current value of the code.

主权项

1. A memory device, comprising:
a counter suitable for counting the number of times that a periodic wave is enabled and generating a code; one or more memory banks each including a plurality of word lines; and one or more measurement blocks corresponding to the memory banks, respectively, and suitable for measuring an active period of a word line, selected when an active operation or a refresh operation is performed, in a corresponding memory bank among the memory banks, wherein each of the measurement blocks measures the active period of the word line based on a first value of the code at an activation starting point of the corresponding memory bank and a current value of the code.