Ingot, silicon carbide substrate, and method for producing ingot

摘要

An ingot in which generation of crack is sufficiently suppressed is obtained. The ingot includes: a seed substrate formed of silicon carbide; and a silicon carbide layer grown on the seed substrate and containing nitrogen atoms. The silicon carbide layer has a thickness of 15 mm or more in a growth direction. In the silicon carbide layer, a concentration gradient of the nitrogen atoms in the growth direction is 5×1017 atoms/cm4 or less.

主权项

1. An ingot comprising:
a seed substrate formed of silicon carbide; a silicon carbide layer grown on said seed substrate and containing nitrogen atoms, said silicon carbide layer having a thickness of 15 mm or more in a growth direction, in said silicon carbide layer, a concentration gradient of said nitrogen atoms in said growth direction being 5×1017 atoms/cm4 or less; wherein in said silicon carbide layer, a concentration of nitrogen atoms is 3×1018 atoms/cm3 or more and 2×1019 atoms/cm3 or less, and wherein the concentration of nitrogen linearly increases in the growth direction of the ingot.