| 发明名称 |
Dense oxide coated component of a plasma processing chamber and method of manufacture thereof |
| 摘要 |
A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component. |
| 申请公布号 |
US9546432(B2) |
申请公布日期 |
2017.01.17 |
| 申请号 |
US201514817742 |
申请日期 |
2015.08.04 |
| 申请人 |
LAM RESEARCH CORPORATION |
发明人 |
Shih Hong;Xu Lin;Kerns John Michael;Charles William;Daugherty John;Ramanathan Sivakami;Ormond Russell;O'Neill Robert G.;Stevenson Tom |
| 分类号 |
C25D11/04;C25D11/02;H01L21/3065;H01L21/02;C25D11/16;C25D11/12;C23C28/00;C23C24/00;H01L21/67;C23C16/44;H01L21/78 |
主分类号 |
C25D11/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprising:
cold spraying a pure aluminum layer on a surface of the aluminum component to a predetermined thickness; and forming a dense oxide coating on the pure aluminum layer using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the pure aluminum layer to undergo microplasmic discharges forming the dense oxide coating on the pure aluminum layer. |
| 地址 |
Fremont CA US |
