Method including a formation of a control gate of a nonvolatile memory cell and semiconductor structure including a nonvolatile memory cell

摘要

A method includes providing a semiconductor structure including a nonvolatile memory cell element and one or more electrically insulating layers covering the nonvolatile memory cell element. The nonvolatile memory cell element includes a source region, a channel region, a drain region and a floating gate over at least a first portion of the channel region. A first opening is formed in the electrically insulating layers over the floating gate, a control gate insulation layer is deposited, and a second opening is formed in the electrically insulating layers over the drain region. The first opening and the second opening are filled with an electrically conductive material. The electrically conductive material in the first opening provides a control gate of the nonvolatile memory cell element and the electrically conductive material in the second opening provides an electrical contact to the drain region.

主权项

1. A method, comprising:
providing a semiconductor structure comprising a nonvolatile memory cell element and one or more electrically insulating layers covering said nonvolatile memory cell element, said nonvolatile memory cell element comprising a source region, a channel region, a drain region and a floating gate over at least a first portion of said channel region; forming a first opening in said one or more electrically insulating layers over said floating gate; after the formation of said first opening, depositing a control gate insulation layer; after the deposition of said control gate insulation layer, forming a second opening in said one or more electrically insulating layers over said drain region; and filling said first opening and said second opening with an electrically conductive material, wherein said electrically conductive material in said first opening provides a control gate of said nonvolatile memory cell element and said electrically conductive material in said second opening provides an electrical contact to said drain region.