发明名称 |
Methods to reduce debonding forces on flexible semiconductor films disposed on vapor-releasing adhesives |
摘要 |
A method comprises providing a handle substrate having a front surface and a back surface; providing a layer of flexible semiconductor material having a front surface and a back surface and an at least partially sacrificial backing layer stack on the back surface of the layer of flexible semiconductor material; bonding the front surface of the layer of flexible semiconductor material to the front surface of the handle substrate; removing at least a portion of the at least partially sacrificial backing layer stack from the back surface of the layer of flexible semiconductor material; opening outgassing paths through the layer of flexible semiconductor material; and processing the layer of flexible semiconductor material. |
申请公布号 |
US9548235(B1) |
申请公布日期 |
2017.01.17 |
申请号 |
US201615144171 |
申请日期 |
2016.05.02 |
申请人 |
International Business Machines Corporation |
发明人 |
Bedell Stephen W.;Sadana Devendra K.;Saenger Katherine L.;Salhi Abdelmajid |
分类号 |
H01L21/683;H01L29/20;H01L29/161;H01L21/324;H01L21/02;H01L21/3205;H01L21/304 |
主分类号 |
H01L21/683 |
代理机构 |
Harrington & Smith |
代理人 |
Harrington & Smith ;Percello Louis J. |
主权项 |
1. A method, comprising:
providing an at least partially sacrificial backing layer stack on a back surface of a semiconductor layer; controllably spelling the semiconductor layer by separating the semiconductor layer at a plane extending through the semiconductor layer parallel to the at least partially sacrificial backing layer stack; disposing a metal adhesion layer on an exposed front surface of the spalled semiconductor layer; bonding the metal adhesion layer to a front surface of a substrate by applying an epoxy adhesive to at least one of the metal adhesion layer and the front surface of the substrate; applying pressure to distribute the epoxy adhesive between the front surface of the substrate and the metal adhesion layer; removing at least a portion of the at least partially sacrificial backing layer stack from the back surface of the semiconductor layer; opening outgassing paths through the semiconductor layer; and processing the semiconductor layer. |
地址 |
Armonk NY US |