发明名称 Methods to reduce debonding forces on flexible semiconductor films disposed on vapor-releasing adhesives
摘要 A method comprises providing a handle substrate having a front surface and a back surface; providing a layer of flexible semiconductor material having a front surface and a back surface and an at least partially sacrificial backing layer stack on the back surface of the layer of flexible semiconductor material; bonding the front surface of the layer of flexible semiconductor material to the front surface of the handle substrate; removing at least a portion of the at least partially sacrificial backing layer stack from the back surface of the layer of flexible semiconductor material; opening outgassing paths through the layer of flexible semiconductor material; and processing the layer of flexible semiconductor material.
申请公布号 US9548235(B1) 申请公布日期 2017.01.17
申请号 US201615144171 申请日期 2016.05.02
申请人 International Business Machines Corporation 发明人 Bedell Stephen W.;Sadana Devendra K.;Saenger Katherine L.;Salhi Abdelmajid
分类号 H01L21/683;H01L29/20;H01L29/161;H01L21/324;H01L21/02;H01L21/3205;H01L21/304 主分类号 H01L21/683
代理机构 Harrington & Smith 代理人 Harrington & Smith ;Percello Louis J.
主权项 1. A method, comprising: providing an at least partially sacrificial backing layer stack on a back surface of a semiconductor layer; controllably spelling the semiconductor layer by separating the semiconductor layer at a plane extending through the semiconductor layer parallel to the at least partially sacrificial backing layer stack; disposing a metal adhesion layer on an exposed front surface of the spalled semiconductor layer; bonding the metal adhesion layer to a front surface of a substrate by applying an epoxy adhesive to at least one of the metal adhesion layer and the front surface of the substrate; applying pressure to distribute the epoxy adhesive between the front surface of the substrate and the metal adhesion layer; removing at least a portion of the at least partially sacrificial backing layer stack from the back surface of the semiconductor layer; opening outgassing paths through the semiconductor layer; and processing the semiconductor layer.
地址 Armonk NY US