Defect detection system for extreme ultraviolet lithography mask

摘要

A defect detection system for an extreme ultraviolet lithography mask comprises an extreme ultraviolet light source (1), extreme ultraviolet light transmission parts (2, 3), an extreme ultraviolet lithography mask (4), a photon sieve (6) and a collection (7) and analysis (8) system. Point light source beams emitted by the extreme ultraviolet light source (1) are focused on the extreme ultraviolet lithography mask (4) through the extreme ultraviolet light transmission parts (2, 3); the extreme ultraviolet lithography mask (4) emits scattered light and illuminates the photon sieve (6); and the photon sieve (6) forms a dark field image and transmits the same to the collection (7) and analysis (8) system. The defect detection system for the extreme ultraviolet photolithographic mask uses the photon sieve to replace a Schwarzchild objective, thereby realizing lower cost, relatively small size and high resolution.

主权项

1. A defect detection system for an extreme ultraviolet lithography mask, comprising
an extreme ultraviolet light source; a plurality of extreme ultraviolet light transmission components configured to transmit light signals; an extreme ultraviolet lithography mask; a photon sieve; and a collection and analysis component configured to collect a dark field image and determine types of defects and positions of the defects, wherein point light source beams emitted by the extreme ultraviolet light source are focused on the extreme ultraviolet lithography mask through the extreme ultraviolet light transmission components; wherein the extreme ultraviolet lithography mask is configured to emit scattered light and illuminate the photon sieve; wherein the photon sieve forms the dark field image and transmits the dark field image to the collection and analysis component and wherein the plurality of extreme ultraviolet light transmission components comprise: a multi-layer film concave plane condenser and a multi-layer film plane reflector, wherein the point light source beams emitted by the extreme ultraviolet light source are focused on the extreme ultraviolet lithography mask after sequentially passing through the multi-layer film concave plane condenser and the multi-layer film plane reflector.