Method of forming a micro LED device with self-aligned metallization stack

摘要

A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, a patterned sacrificial layer is utilized to form a self-aligned metallization stack and is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes.

主权项

1. A method of forming a micro LED array comprising:
forming a plurality of laterally separate self-aligned metallization stacks within a corresponding plurality of openings in a patterned sacrificial layer formed on a p-n diode layer; bonding a first substrate stack including the plurality of laterally separate self-aligned metallization stacks, the patterned sacrificial layer, and the p-n diode layer to a second substrate with a bonding layer; etching through the p-n diode layer to form a plurality of micro p-n diodes over the plurality of separate metallization stacks, and exposing the patterned sacrificial layer laterally between the plurality of separate metallization stacks; and removing the patterned sacrificial layer.