| 发明名称 | Method of processing a substrate and a method of processing a wafer | ||
| 摘要 | According to various embodiments, a method of processing a substrate may include: forming a plurality of trenches into a substrate between two chip structures in the substrate, the trenches defining at least one pillar between the two chip structures and a sidewall on each of said two chip structures; disposing an auxiliary carrier on the substrate to hold the chip structures and the at least one pillar; at least partially filling the trenches with encapsulation material to cover the at least one pillar and the sidewalls, thereby at least partially encapsulating the chip structures; removing a portion of the encapsulation material to expose at least a portion of the at least one pillar; and at least partially removing the at least one pillar. | ||
| 申请公布号 | US9548248(B2) | 申请公布日期 | 2017.01.17 |
| 申请号 | US201414453639 | 申请日期 | 2014.08.07 |
| 申请人 | INFINEON TECHNOLOGIES AG | 发明人 | Pueschner Frank;Schaetzler Bernhard;Gabler Franz |
| 分类号 | H01L21/82;H01L21/302;H01L21/304;H01L21/56;H01L23/31 | 主分类号 | H01L21/82 |
| 代理机构 | Viering, Jentschura & Partner mbB | 代理人 | Viering, Jentschura & Partner mbB |
| 主权项 | 1. A method of processing a substrate, the method comprising: forming a plurality of trenches into a substrate between two chip structures in the substrate, the trenches defining at least one pillar between the two chip structures and a sidewall on each of said two chip structures; disposing an auxiliary carrier on the substrate to hold the chip structures and the at least one pillar; at least partially filling the trenches with encapsulation material to cover the at least one pillar and the sidewalls, thereby at least partially encapsulating the chip structures; removing a portion of the encapsulation material to expose at least a portion of the at least one pillar; and at least partially removing the at least one pillar. | ||
| 地址 | Neubiberg DE | ||