Member for semiconductor manufacturing apparatus and method for manufacturing the same

摘要

A high-frequency power supply includes a shaft bonded to one surface of a plate serving as a gas distributor plate. The plate includes a radio-frequency electrode buried therein. The shaft has a through-hole through which a gas flows. The plate and the shaft are made of a ceramic material. The shaft has a double-tube structure including the inner tube and the outer tube . The interior space of the inner tube forms the through-hole. The plate is hermetically solid-state bonded to the inner tube and the outer tube. The shaft is bonded to the center of the plate.

主权项

1. A high-frequency power supply for a semiconductor manufacturing apparatus, comprising: a gas distributor plate including an RF electrode buried therein; and a shaft bonded to one surface of the gas distributor plate, the shaft having a through-hole through which a gas flows, the gas from the through-hole being discharged from a plurality of holes disposed in the gas distributor plate, wherein
the gas distributor plate and the shaft are made of a ceramic material, the shaft has a double-tube structure including an inner tube and an outer tube, a first interior space within the inner tube to form the through-hole through which the gas flows, and a second interior space between a radially outer surface of the inner tube and a radially inner surface of the outer tube, and the plurality of holes extend from the one surface of the gas distributor plate to a second surface of the gas distributor plate that is opposite to the one surface of the gas distributor plate.