发明名称 Method of fabricating semiconductor package having an interposer structure
摘要 A method of fabricating a semiconductor package is provided, including: cutting a substrate into a plurality of interposers; disposing the interposers in a plurality of openings of a carrier, wherein the openings are spaced from one another by a distance; forming a first encapsulant to encapsulate the interposers; removing the carrier; and disposing at least a semiconductor element on each of the interposers. By cutting the substrate first, good interposers can be selected and rearranged such that finished packages can be prevented from being wasted due to inferior interposers.
申请公布号 US9548220(B2) 申请公布日期 2017.01.17
申请号 US201614986903 申请日期 2016.01.04
申请人 Siliconware Precision Industries Co., Ltd. 发明人 Chuang Kuan-Wei;Lin Chun-Tang;Liao Yi-Chian;Lai Yi-Che
分类号 H01L21/48;H01L21/58;H01L23/498;H01L21/78;H01L23/00;H01L23/14;H01L21/311;H01L21/56;H01L21/683;H01L25/00 主分类号 H01L21/48
代理机构 Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. 代理人 Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. ;Corless Peter F.;Jensen Steven M.
主权项 1. A method of fabricating a semiconductor package, comprising: providing a substrate having opposite first and second surfaces and a plurality of conductive through holes penetrating the first surface, wherein each of the conductive through holes has a first end at the first surface and a second end opposite to the first end; cutting the substrate into a plurality of interposers, wherein each of the interposers has side surfaces connected to first and second surfaces thereof; disposing the interposers on a carrier through the first surfaces thereof, wherein the carrier has a plurality of openings so as for the interposers to be disposed therein and the openings are spaced from one another by a distance; forming a first encapsulant on the carrier so as to cover the side surfaces of the interposers and encapsulate the interposers; removing the carrier; and disposing and electrically connecting at least a semiconductor element to the first surface of each of the interposers.
地址 Taichung TW