| 主权项 |
1. A method of programming a resistive non-volatile memory cell, comprising:
applying a programming voltage to a first terminal of the resistive non-volatile memory cell; sensing, during the applying the programming voltage, if the resistive non-volatile memory cell has been programmed; limiting current through the resistive non-volatile memory cell to a first magnitude; and after a predetermined time, if the sensing has not detected that the resistive non-volatile memory cell has been programmed, limiting the current through the resistive non-volatile memory cell to a second magnitude greater than the first magnitude, wherein the resistive non-volatile memory cell comprises a programmable resistive element and a switching transistor, the programmable resistive element is coupled to a source line, the switching transistor is coupled to a bit line, and the limiting the current is by coupling a current limiter to the bit line, and erasing the resistive non-volatile memory cell in an erase mode wherein the erasing comprises applying a voltage limit to the bit line and coupling an impedance between the source line and a supply voltage terminal. |
