Variable resistance element, semiconductor device having variable resistance element, semiconductor device manufacturing method, and programming method using variable resistance element

摘要

This variable resistance element is provided with a variable resistance film, a first electrode, which is disposed in contact with one surface of the variable resistance film, and a second electrode, which is disposed in contact with the other surface of the variable resistance film. The first and the second electrodes have corner portions, respectively, and the distance between the corner portions of the first and the second electrodes is set equal to the shortest distance between the first and the second electrodes. Furthermore, the variable resistance element has a third electrode, which is disposed on the one surface of the variable resistance film.

主权项

1. A variable resistance element comprising:
a variable resistance film; a first electrode placed on one of surfaces of the variable resistance film, the first electrode configured to be a wiring; and a second electrode placed on the other surface of the variable resistance film, the second electrode configured to be an inactive electrode, wherein
the first electrode has a curved edge;an insulation barrier film has an opening formed therein, in which a part of the variable resistance film is inserted, the insulation barrier film provided between the first electrode and the variable resistance film; andthe curved edge of the first electrode is in contact with the variable resistance film through the opening.