| 发明名称 | Memory device | ||
| 摘要 | According to one embodiment, a memory device includes a memory cell, a sense amplifier, and a resistor. The sense amplifier includes a first input and a second input, outputs a signal in accordance with a difference between the first and second inputs, and is selectively coupled at a second input to the memory cell. The resistor is in a first path between the first input of the sense amplifier and a ground node. | ||
| 申请公布号 | US9548111(B2) | 申请公布日期 | 2017.01.17 |
| 申请号 | US201514872908 | 申请日期 | 2015.10.01 |
| 申请人 | KABUSHIKI KAISHA TOSHIBA;SK HYNIX INC. | 发明人 | Takahashi Masahiro;Inaba Tsuneo;Kim Dong Keun;Lee Ji Wang |
| 分类号 | G11C13/00;G11C11/16 | 主分类号 | G11C13/00 |
| 代理机构 | Holtz, Holtz & Volek PC | 代理人 | Holtz, Holtz & Volek PC |
| 主权项 | 1. A memory device comprising: a sense amplifier comprising a first input and a second input, the sense amplifier outputting a signal in accordance with a difference between the first and second inputs; a first current path including a memory cell configured to be coupled between the first input of the sense amplifier and a ground node; and a second current path between the second input of the sense amplifier and the ground node, wherein, when a potential of the ground node varies, a variation of a second current flowing in the second current path follows a variation of a first current flowing in the first current path including the memory cell of a first state. | ||
| 地址 | Tokyo JP | ||