发明名称 Vapor phase growth apparatus and vapor phase growth method
摘要 A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a gas supply path connected to an organic metal supply source at a first connection, the gas supply path being connected to a carrier gas supply source, the gas supply path supplies a process gas including organic metal and a carrier gas into the reaction chamber; a gas discharge path connected to the organic metal supply source at a second connection, the gas discharge path discharges the process gas to the outside of the apparatus; a first mass flow controller and a first adjustment device provided at the gas supply path; a second adjustment device provided at the gas discharge path; and a shortcut path connecting the gas supply path to the gas discharge path. One of the first and the second adjustment device is a back pressure regulator, and the other is a mass flow controller.
申请公布号 US9546435(B2) 申请公布日期 2017.01.17
申请号 US201414322127 申请日期 2014.07.02
申请人 NuFlare Technology, Inc. 发明人 Yamada Takumi;Sato Yuusuke
分类号 C30B25/16;C30B35/00;C30B29/40 主分类号 C30B25/16
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A vapor phase growth apparatus comprising: a reaction chamber; a gas supply path connected to an organic metal supply source supplying organic metal at a first connection, the gas supply path being connected to a carrier gas supply source supplying a carrier gas, the gas supply path configured to supply a process gas including the organic metal and the carrier gas to the reaction chamber; a gas discharge path connected to the organic metal supply source at a second connection, the gas discharge path configured to discharge the process gas including the organic metal and the carrier gas to an outside of the apparatus; a first mass flow controller provided at the gas supply path, the first mass flow controller being provided at the side of the carrier gas supply source in relation to the first connection; a first adjustment device provided at the gas supply path, the first adjustment device being provided at a side of the reaction chamber in relation to the first connection; a second adjustment device provided at the gas discharge path, the second adjustment device being provided at an outside of the apparatus in relation to the second connection; and a shortcut path connecting the gas supply path and the gas discharge path, one end of the shortcut path being connected to the gas supply path between the first mass flow controller and the first adjustment device, other end of the shortcut path being connected to the gas discharge path opposite to an outside of the apparatus in relation to the second adjustment device, wherein at least one of the first adjustment device and the second adjustment device is a back pressure regulator, and the other thereof is a mass flow controller.
地址 Yokohama JP