发明名称 Method for forming film layer and substrate including the film layer
摘要 A method of forming a film layer and a substrate comprising the film layer to reduce occurrence of defects and improve the quality of the film layer are described. The method of forming a film layer comprises forming a plurality of sub-film layers of a same material overlapped with each other on a substrate by multiple steps to constitute the film layer, wherein each time a sub-film layer is formed, the newly-formed sub-film layer is cleaned immediately. The substrate comprises a film layer formed by the above method.
申请公布号 US9546421(B2) 申请公布日期 2017.01.17
申请号 US201314363784 申请日期 2013.12.16
申请人 BOE Technology Group Co., Ltd.;Beijing BOE Display Technology Co., Ltd. 发明人 Tang Hua;Zhao Ran
分类号 C23C16/44;C23C16/40;C23C14/08;C23C14/22;C23C4/00;G02F1/1343;C23C4/06;C23C4/12;C23C4/18;C23C4/10;C23C14/00;C23C16/00;C23C14/34;C23C14/58;C23C16/56;C23C14/02;B08B11/00;B05D7/00;B05D5/00;B05D1/02;B05D1/08;B05D3/10;B05D1/10;G02F1/13 主分类号 C23C16/44
代理机构 Blakely, Sokoloff, Taylor & Zafman LLP 代理人 Blakely, Sokoloff, Taylor & Zafman LLP
主权项 1. A method of forming a film layer, comprising: forming a plurality of sub-film layers of a same material overlapped with each other on a substrate by multiple operations to constitute the film layer, wherein the material is a metal or a metal oxide, wherein each time a sub-film layer is formed, the newly-formed sub-film layer is cleaned immediately and wherein power of equipment for forming the sub-film layers is controlled in a range of 6.8 kW to 7.8 kW, wherein each of knobbles formed on the sub-film layers is less than 50 microns in size.
地址 Beijing CN