发明名称 Electronic device
摘要 To improve electric characteristics of an electronic device. An electronic device includes a semiconductor device and a three-terminal capacitor mounted on the upper surface of a mounting substrate, the semiconductor device includes a power supply pad and a ground pad, the power supply pad and the ground pad are electrically connected with a power supply land and a ground land, respectively, and the power supply land and the ground land are allocated to a land line in an outermost periphery of the semiconductor device, Then, the power supply land and the ground land are electrically connected to the three-terminal capacitor by wirings formed on the upper surface of the mounting substrate.
申请公布号 US9549461(B2) 申请公布日期 2017.01.17
申请号 US201514625440 申请日期 2015.02.18
申请人 RENESAS ELECTRONICS CORPORATION 发明人 Toyama Masahiro;Suwa Motoo
分类号 H05K7/00;H05K1/02 主分类号 H05K7/00
代理机构 McDermott Will & Emery LLP 代理人 McDermott Will & Emery LLP
主权项 1. An electronic device, comprising: (A) a mounting substrate including a first surface, a power supply electrode formed on the first surface, a ground electrode formed on the first surface, and a second surface opposite to the first surface; (B) a semiconductor device mounted over the first surface of the mounting substrate, the semiconductor device including: (B1) a wiring substrate including: (b1) an upper surface,(b2) a lower surface opposite to the upper surface, and(b3) a plurality of lands formed on the lower surface, and(B2) a semiconductor chip mounted over the upper surface of the wiring substrate, and electrically connected with the lands; and (C) a three-terminal capacitor mounted over the first surface of the mounting substrate, and mounted adjacent to the semiconductor device, the three-terminal capacitor including: (C1) a first power supply terminal,(c2) a second power supply terminal provided at a position facing the first power supply terminal, and(c3) a first ground terminal provided between the first power supply terminal and the second power supply terminal, wherein a power supply land of the lands of the semiconductor device is electrically connected with the power supply electrode of the mounting substrate, wherein a ground land of the lands of the semiconductor device is electrically connected with the ground electrode of the mounting substrate, wherein the second power supply terminal of the three-terminal capacitor is electrically connected with the power supply electrode of the mounting substrate via a first wiring formed on the first surface of the mounting substrate, wherein the first ground terminal of the three-terminal capacitor is electrically connected with the ground electrode of the mounting substrate via a second wiring formed on the first surface of the mounting substrate, wherein the lower surface of the wiring substrate of the semiconductor device has a quadrangle shape having a first side, a second side, a third side, and a fourth side, wherein the lands formed on the lower surface are disposed along the first side, and disposed so as to constitute a plurality of land lines having different distances from the first side, and wherein the power supply land and the ground land belong to a land line having the shortest distance from the first side.
地址 Tokyo JP