Fabrication method of a transistor with improved field effect

摘要

Fabrication of a field-effect transistor is performed on a substrate comprising a film made from first semiconductor material, a gate dielectric covered by a gate electrode, source and drain areas separated by the gate electrode, a protection layer covering gate electrode and source and drain areas, and an access hole to the source area and/or to drain area. Metallic material is deposited in the access hole in contact with the first semiconductor material of the source and/or drain area. An electrically conducting barrier layer that is non-reactive with the first semiconductor material and with the metallic material is deposited before reaction of metallic material with first semiconductor material. Transformation heat treatment of the metallic material with the semiconductor material is performed to form a metallic material having a base formed by the semiconductor material generating a set of stresses on a conduction channel arranged between the source and drain areas.

主权项

1. A fabrication method of a field-effect transistor, comprising the following consecutive steps:
providing a substrate comprising:
a film made from first semiconductor material,a gate dielectric covered by a gate electrode,source and drain areas separated by the gate electrode,a protection layer covering the gate electrode and the source and drain areas, andan access hole to the source area and/or to the drain areas, depositing a metallic material in the access hole of the source and/or drain areas so that the metallic material is in contact with the first semiconductor material, depositing an electrically conducting barrier layer, said barrier layer being non-reactive with the first semiconductor material and non-reactive with the metallic material, depositing an electric conductor on said barrier layer so as to fill said access hole, and performing a heat treatment so that the metallic material react with the semiconductor material to form an alloy between a metallic material and the semiconductor material generating a set of stresses on a conduction channel arranged between the source and drain areas, wherein the metallic material is deposited by means of selective deposition or directional deposition in a direction perpendicular to the surface of the substrate.