Semiconductor device and information reading method

摘要

A semiconductor device including a memory device configured to take a plurality of resistance states that are distinguishable from one another; a bias application section configured to apply, in a bias application period, a bias signal to the memory device; and a determination section configured to determine a resistance state of the memory device on the basis of a detection signal, in which the detection signal is generated in the memory device to which the bias signal is applied. The bias application section sets a length of the bias application period in accordance with a resistance value of the memory device, when the resistance state determined by the determination section is predetermined one of the resistance states.

主权项

1. A memory system, comprising:
a plurality of memory cells configured to have a plurality of resistance states; a first driving section configured to connect to the memory cells via first lines; a second driving section configured to connect to the memory cells via second lines and include a read section that applies a bias signal via the second lines to the memory cells and a determination section determining one of the plurality of resistance states of the memory device; and a control section configured to control the memory cells, wherein, the second driving section sets a length of a bias period in accordance with a resistance value of the memory cells based on the resistance state determined by the determination section.