发明名称 |
Nanopore device including graphene nanopore and method of manufacturing the same |
摘要 |
Provided are a nanopore device with resolution improved by graphene nanopores, and a method of manufacturing the same. The nanopore device includes: a first insulating layer; a graphene layer disposed on the first insulating layer and having a nanopore formed at a center portion of the graphene layer; and first and second electrode layers disposed respectively at both sides of the nanopore on a top surface of the graphene layer, wherein a center region of the first insulating layer is removed such that the center portion of the graphene layer is exposed to the outside. |
申请公布号 |
US9546995(B2) |
申请公布日期 |
2017.01.17 |
申请号 |
US201414257654 |
申请日期 |
2014.04.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Jeon Tae-han;Shim Jeo-young;Eom Kun-sun;Lee Dong-ho;Lee Joo-ho |
分类号 |
G01N27/327;G01N27/453;G01N27/447;H01L29/66;H01L21/768;H01L29/16;G01N33/487;B81C1/00 |
主分类号 |
G01N27/327 |
代理机构 |
Leydig, Voit & Mayer, Ltd. |
代理人 |
Leydig, Voit & Mayer, Ltd. |
主权项 |
1. A nanopore device comprising:
a first insulating layer; a multilayer graphene structure disposed on the first insulating layer and having a nanopore disposed at a center portion of the multilayer graphene structure; and first and second electrode layers disposed respectively at opposite sides of the nanopore on a top surface of the multilayer graphene structure, wherein a center region of the first insulating layer has been removed such that the center portion of the multilayer graphene structure is exposed, wherein the multilayer graphene structure comprises:
a bottom graphene layer disposed on the first insulating layer;an intermediate graphene layer directly disposed on the bottom graphene layer; and a top graphene layer directly disposed on the intermediate graphene layer, a center portion of an upper surface of the top graphene layer being exposed, wherein each of the bottom, intermediate and top graphene layers is formed of graphene, wherein a width of the removed center region of the first insulating layer is larger than a diameter of the nanopore such that a center portion of a lower surface of the bottom graphene layer is exposed. |
地址 |
Suwon-si KR |