发明名称 System and method of data storage in flash memory
摘要 Flash memory is subject to a wear out failure mechanism which may depend on the number of times each cell of the memory is programmed and erased. The higher the programming voltage used, the more rapidly the cell degrades. A system and method for reducing the average programming voltage for data sets is disclosed.
申请公布号 US9547588(B1) 申请公布日期 2017.01.17
申请号 US201414481102 申请日期 2014.09.09
申请人 VIOLIN MEMORY INC. 发明人 Biederman Daniel C.;Bennett Jon C. R.
分类号 G06F12/00;G06F12/02 主分类号 G06F12/00
代理机构 Brinks Gilson & Lione 代理人 Brinks Gilson & Lione
主权项 1. A method of storing data in a memory system: using a processor configured for: receiving a data set from a user for storage; processing the data set such that a Wear Index of the processed data set is reduced with respect to a Wear Index of the received data set; and storing the processed data set in a memory area of the memory system that is not larger than the received data set, including user metadata intended to be stored with the received data set wherein a size of the data set is a page and the method further comprises: determining a size of the data set after the step of losslessly compressing the data set; and, one of: storing the processed data set if the size of the data set is less than a predetermined limit; orstoring the received data set if the size of the data set is greater than the predetermined limit.
地址 Santa Clara CA US