| 发明名称 | Quantum cascade laser design with stepped well active region | ||
| 摘要 | Included are embodiments of a quantum cascade laser structure. Some embodiments include a plurality of quantum wells and a plurality of barriers, at least a portion of which define an active region. In some embodiments, a photon is emitted in the active region when an electron transitions from an upper laser state in the active region to a lower laser state in the active region. Additionally, a final quantum well in the plurality of quantum wells may define the active region, where the final quantum well extends below an adjacent quantum well in the active region. Similarly, the final quantum well may include a thickness that is less than a thickness of the adjacent quantum well in the active region. | ||
| 申请公布号 | US9548590(B2) | 申请公布日期 | 2017.01.17 |
| 申请号 | US201213661559 | 申请日期 | 2012.10.26 |
| 申请人 | Thorlabs Quantum Electronics, Inc. | 发明人 | Caneau Catherine Genevieve;Xie Feng;Zah Chung-En |
| 分类号 | H01S5/34;B82Y20/00 | 主分类号 | H01S5/34 |
| 代理机构 | Graham Curtin, P.A. | 代理人 | Graham Curtin, P.A. |
| 主权项 | 1. A quantum cascade laser structure comprising a plurality of quantum wells and a plurality of barriers, at least a portion of which define an active region, wherein: a photon is emitted in the active region when an electron transitions from an upper laser state in the active region to a lower laser state in the active region; a final quantum well in the plurality of quantum wells that define the active region, the final quantum well extending below an adjacent quantum well in the active region when no bias is applied; and the final quantum well comprises a thickness that is less than a thickness of the adjacent quantum well in the active region. | ||
| 地址 | Jessup MD US | ||