Method of manufacturing a semiconductor device

摘要

A method of manufacturing a semiconductor device that reduces degradation of device properties includes forming an impurity region in a surface layer of a semiconductor substrate by ion injection; forming a transition metal layer in a surface of the impurity region; and exposing the semiconductor substrate with the transition metal layer formed thereon to a hydrogen plasma atmosphere formed by microwaves. The transition metal layer is heated and the heat is transferred from the transition metal layer to the impurity region to form an ohmic contact at the interface of the transition metal layer and the impurity region by reaction of the transition metal layer and the impurity region, and the impurity region is activated. When the substrate is a silicon carbide substrate, the ohmic contact is composed of a transition metal silicide and the impurity region, which is an ion injection layer, is activated.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming an impurity region in a surface layer of a semiconductor substrate by ion injection; forming a transition metal layer in a surface of the impurity region, with an interface therebetween; and exposing the semiconductor substrate having the transition metal layer formed thereon to a hydrogen plasma atmosphere for a predetermined period, the hydrogen plasma atmosphere formed to have a predetermine plasma density by microwaves having a predetermined electric energy so as to heat only the transition metal layer to a predetermined temperature, and to transfer the heat from the transition metal layer to the impurity region and form an ohmic contact at the interface of the transition metal layer and the impurity region by reaction of the transition metal layer and the impurity region, and activate the impurity region.