发明名称 |
Organic light-emitting display apparatus and method of manufacturing the same |
摘要 |
An organic light-emitting display apparatus including a substrate; a thin-film transistor (TFT) arranged on the substrate; a black matrix located between the substrate and the TFT; a pixel electrode, which is located between the substrate and the TFT and having edge portions covered by the black matrix; an insulation layer, which covers the TFT and opens the top surface of the pixel electrode; an organic emission layer, which is arranged on the pixel electrode; and a counter electrode, which is arranged on the organic emission layer. |
申请公布号 |
US9548344(B2) |
申请公布日期 |
2017.01.17 |
申请号 |
US201514597661 |
申请日期 |
2015.01.15 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Ahn Kiwan;Jang Yongjae;Oh Youngeun |
分类号 |
H01L29/08;H01L27/32;H01L51/52 |
主分类号 |
H01L29/08 |
代理机构 |
Knobbe Martens Olson & Bear LLP |
代理人 |
Knobbe Martens Olson & Bear LLP |
主权项 |
1. An organic light-emitting display apparatus comprising:
a substrate; a thin-film transistor (TFT) arranged on the substrate; a black matrix located between the substrate and the TFT; a pixel electrode, which is located between the substrate and the TFT and having edge portions covered by the black matrix and an upper surface of the black matrix is higher than a top surface of the pixel electrode; wherein the black matrix contains a material that is resistant to a temperature equal to or higher than 550° C.; an insulation layer, which covers the TFT and opens the top surface of the pixel electrode and side surfaces of the black matrix; an organic emission layer, which is arranged on the pixel electrode; a counter electrode, which is arranged on the organic emission layer; wherein the pixel electrode is directly connected to the source electrode or the drain electrode of the TFT through the black matrix. |
地址 |
Gyeonggi-do KR |