Semiconductor and method of fabricating the same

摘要

Provided is a semiconductor and method of manufacturing the same, and a method of forming even doping concentration of respective semiconductor device when manufacturing multiple semiconductor devices. When a concentration balance is disrupted due to an increase in doping region size, doping concentration is still controllable in example by using ion injected blocking pattern. Thus, the examples relate to a semiconductor and manufacture device with even doping, and high breakdown voltage obtainable as a result of such doping.

主权项

1. A semiconductor device comprising:
a first region and a second region located on a substrate; a first semiconductor device located in the first region and having a first deep well region with a first doping concentration; a second semiconductor device located in the second region and having a second deep well region with a second doping concentration that is greater than the first doping concentration; a first body region of a first conductivity type having a third doping concentration, adjacent to the first deep well region, wherein the first doping concentration is less than the third doping concentration; and a second body region of a second conductivity type opposite to the first conductivity type located in the first body region, wherein the first deep well region has a non-planar doping profile in a horizontal direction.