Electro-optical device comprising a ridge waveguide and a PN junction and method of manufacturing said device

摘要

An electro-optic device, comprising an insulating layer and a layer light-carrying material adjacent the insulating layer. The layer of light-carrying material, such as silicon, comprises a first doped region of a first type and a second doped region of a second, different type abutting the first doped region to form a pn junction. The first doped region has a first thickness at the junction, and the second doped region has a second thickness at the junction, the first thickness being greater than the second thickness, defining a waveguide rib in the first doped region for propagating optical signals. Since the position of the junction coincides with the sidewall of the waveguide rib a self-aligned process can be used in order to simplify the fabrication process and increase yield.

主权项

1. A method of fabricating an electro-optic device, comprising: doping a first region of a layer of light-carrying material with a dopant of a first type;
depositing a mask over a part of said layer of light-carrying material and partially etching areas of the layer not covered by the mask, to form thereby a relatively thicker waveguide rib for propagating optical signals; and doping a second region of the layer, abutting the mask, to form a second doped region of a second, different type by using a combination of the mask used to etch the waveguide in the light guiding layer and a photoresist window to mask an implantation such that the second doped region is self-aligned with the waveguide rib; doping a third region of the layer, abutting the mask to an opposite side to the second doped region, to form a third doped region of the same type as the first type but with different doping concentration by using the combination of the mask used to etch the waveguide in the light guiding layer and a photoresist window to mask the implantation such that the third doped region is self-aligned with the waveguide rib.