Integrated MEMS-CMOS devices and methods for fabricating MEMS devices and CMOS devices

摘要

Integrated MEMS-CMOS devices and methods for fabricating MEMS devices and CMOS devices are provided. An exemplary method for fabricating a MEMS device and a CMOS device includes forming the CMOS device in and/or over a first side of a semiconductor substrate. Further, the method includes forming the MEMS device in and/or under a second side of the semiconductor substrate. The second side of the semiconductor substrate is opposite the first side of the semiconductor substrate.

主权项

1. A method for fabricating a MEMS device and a CMOS device, the method comprising:
forming the CMOS device in and/or directly on a first side of a bulk semiconductor wafer; and etching a via into the first side of the bulk semiconductor wafer; forming an interconnect in the via; forming an interlayer dielectric over the CMOS device and the first side of the bulk semiconductor wafer; etching a first trench through the interlayer dielectric to expose the interconnect; forming a first conductive structure in the first trench to electrically connect the CMOS device and the interconnect; recessing a second side of the bulk semiconductor wafer to expose the interconnect; bonding an intermediate layer and a semiconductor layer to the second side of the bulk semiconductor wafer; forming the MEMS device directly on the second side of the bulk semiconductor wafer, wherein the second side of the bulk semiconductor wafer is opposite the first side of the bulk semiconductor wafer, wherein forming the MEMS device directly on the second side of the bulk semiconductor wafer comprises forming the MEMS device within the intermediate layer and within the semiconductor layer; etching a second trench through the semiconductor layer and the intermediate layer to expose the interconnect; and forming a second conductive structure in the second trench to electrically connect the CMOS device and the interconnect, wherein the second conductive structure contacts the second side of the bulk semiconductor wafer.