发明名称 |
Charged particle beam writing apparatus, and charged particle beam writing method |
摘要 |
Charged particle beam writing apparatus includes a first generation unit to generate a smallest deflection region layer in three or more deflection region layers each having deflection regions of a size different from those of other deflection region layers, for each of a plurality of figure types variably shapable using first and second shaping apertures, an assignment unit to assign each of a plurality of shot figure patterns to deflection regions of the smallest deflection region layer of a corresponding one of the plurality of figure types, a correction unit to correct, by shifting the position of each smallest deflection region layer, according to a variable shaping position of each figure type, and a writing unit to write each of the plurality of shot figure patterns on a target object, in a state where the position of each smallest deflection region layer has been corrected for each figure type. |
申请公布号 |
US9548183(B2) |
申请公布日期 |
2017.01.17 |
申请号 |
US201414459470 |
申请日期 |
2014.08.14 |
申请人 |
NuFlare Technology, Inc. |
发明人 |
Yashima Jun |
分类号 |
H01J37/147;H01J37/317 |
主分类号 |
H01J37/147 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A charged particle beam writing apparatus comprising:
a first generation unit configured to generate a smallest deflection region layer in three or more deflection region layers each having deflection regions of a size different from those of other deflection region layers, for each figure type of a plurality of figure types which can be variably shaped using a first shaping aperture and a second shaping aperture; an assignment unit configured to assign each of a plurality of shot figure patterns to deflection regions of the smallest deflection region layer of a corresponding one of the plurality of figure types; a correction unit configured to perform correction to shift a position of each of the smallest deflection region layer, in accordance with a variable shaping position of the each figure type; and a writing unit configured to write the each of the plurality of shot figure patterns on a target object with a charged particle beam, in a state where the position of the each of the smallest deflection region layer has been corrected for the each figure type. |
地址 |
Yokohama JP |