| 发明名称 | Manufacturing method for a semiconductor device, pattern generating method and nontransitory computer readable medium storing a pattern generating program | ||
| 摘要 | According to one embodiment, stepped structure is formed on a semiconductor substrate, a processing film is formed to cover the stepped structure, a resist film is formed on the processing film in such a manner as to be thinner at a higher portion of the stepped structure than at a lower portion of the same, and the resist film and the processing film are etched to flatten the processing film. | ||
| 申请公布号 | US9547743(B2) | 申请公布日期 | 2017.01.17 |
| 申请号 | US201514731623 | 申请日期 | 2015.06.05 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Urayama Takuro;Yanai Yoshihiro;Miyoshi Seiro |
| 分类号 | H01L21/027;G06F17/50;H01L29/66;H01L27/115;H01L21/02;H01L21/3105 | 主分类号 | H01L21/027 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A manufacturing method for a semiconductor device, comprising: forming a stepped structure on a semiconductor substrate; forming a processing film to cover the stepped structure; applying a resist film to the processing film; exposing the resist film to light such that the resist film is higher in solubility at a higher portion of the stepped structure than at a lower portion of the same; developing the exposed resist film to form a resist film on the processing film in such a manner as to be thinner at the higher portion of the stepped structure than at the lower portion of the same; and etching the resist film and the processing film to flatten the processing film. | ||
| 地址 | Minato-ku JP | ||