| 发明名称 | Silicon-on-plastic semiconductor device and method of making the same | ||
| 摘要 | A semiconductor device that does not produce nonlinearities attributed to a high resistivity silicon handle interfaced with a dielectric region of a buried oxide (BOX) layer is disclosed. The semiconductor device includes a semiconductor stack structure with a first surface and a second surface wherein the second surface is on an opposite side of the semiconductor stack structure from the first surface. At least one device terminal is included in the semiconductor stack structure and at least one electrical contact extends from the second surface and is electrically coupled to the at least one device terminal. The semiconductor stack is protected by a polymer disposed on the first surface of the semiconductor stack. The polymer has high thermal conductivity and high electrical resistivity. | ||
| 申请公布号 | US9548258(B2) | 申请公布日期 | 2017.01.17 |
| 申请号 | US201414529870 | 申请日期 | 2014.10.31 |
| 申请人 | Qorvo US, Inc. | 发明人 | Costa Julio C.;Shuttleworth David M.;Antonell Michael J. |
| 分类号 | H01L23/373;H01L27/12;H01L23/48 | 主分类号 | H01L23/373 |
| 代理机构 | Withrow & Terranova, P.L.L.C. | 代理人 | Withrow & Terranova, P.L.L.C. |
| 主权项 | 1. A semiconductor device comprising: a semiconductor stack structure including at least one device terminal of a semiconductor device and having a first surface and a second surface, wherein the second surface is an external surface of a buried oxide (BOX) layer that is on an opposite side of the semiconductor stack structure from the first surface; at least one electrical contact that is electrically coupled to the at least one device terminal and extending outward from the second surface; and a polymeric layer disposed on the first surface of the semiconductor stack structure and comprises a polymer and an admixture that increases thermal conductivity of the polymer. | ||
| 地址 | Greensboro NC US | ||