发明名称 Solar cell having doped semiconductor heterojunction contacts
摘要 A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature processing is unnecessary in fabricating the solar cell.
申请公布号 US9548409(B2) 申请公布日期 2017.01.17
申请号 US201414459062 申请日期 2014.08.13
申请人 SunPower Corporation 发明人 Cousins Peter John
分类号 H01L31/028;H01L31/0392;H01L31/0745;H01L31/0747;H01L31/0224;H01L31/0376;H01L31/068;H01L31/18;H01L31/0216;H01L31/074 主分类号 H01L31/028
代理机构 Okamoto & Benedicto LLP 代理人 Okamoto & Benedicto LLP
主权项 1. A method of fabricating a solar cell, the method comprising: providing a silicon substrate; forming a tunnel oxide layer on a surface of the silicon substrate; forming a first pattern of acceptor-doped semiconductor material over the tunnel oxide layer to create a plurality of emitters of a first type; forming a second pattern of donor-doped semiconductor material over the tunnel oxide layer and interleaved with the first pattern to create a plurality of emitters of a second type; and forming a first conductive pattern interconnecting the acceptor-doped semiconductor material; and forming a second conductive pattern interconnecting the donor-doped semiconductor material.
地址 San Jose CA US