发明名称 |
Solar cell having doped semiconductor heterojunction contacts |
摘要 |
A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature processing is unnecessary in fabricating the solar cell. |
申请公布号 |
US9548409(B2) |
申请公布日期 |
2017.01.17 |
申请号 |
US201414459062 |
申请日期 |
2014.08.13 |
申请人 |
SunPower Corporation |
发明人 |
Cousins Peter John |
分类号 |
H01L31/028;H01L31/0392;H01L31/0745;H01L31/0747;H01L31/0224;H01L31/0376;H01L31/068;H01L31/18;H01L31/0216;H01L31/074 |
主分类号 |
H01L31/028 |
代理机构 |
Okamoto & Benedicto LLP |
代理人 |
Okamoto & Benedicto LLP |
主权项 |
1. A method of fabricating a solar cell, the method comprising:
providing a silicon substrate; forming a tunnel oxide layer on a surface of the silicon substrate; forming a first pattern of acceptor-doped semiconductor material over the tunnel oxide layer to create a plurality of emitters of a first type; forming a second pattern of donor-doped semiconductor material over the tunnel oxide layer and interleaved with the first pattern to create a plurality of emitters of a second type; and forming a first conductive pattern interconnecting the acceptor-doped semiconductor material; and forming a second conductive pattern interconnecting the donor-doped semiconductor material. |
地址 |
San Jose CA US |