| 主权项 |
1. A solar cell comprising:
a back electrode layer on a support substrate; a light absorbing layer including a plurality of glass frits having sodium on the back electrode layer; a buffer layer on the light absorbing layer; and a front electrode layer on the buffer layer; wherein the light absorbing layer includes a CIGSS (Cu(In,Ga)(Se,S)2) crystal structure, a CISS (Cu(In)(Se,S)2) crystal structure, or a CGSS (Cu(Ga)(Se,S)2) crystal structure; wherein the back electrode layer, the light absorbing layer, the buffer layer, and the front electrode layer are sequentially formed on the support substrate; wherein the back electrode layer makes contact with the support substrate and the light absorbing layer, wherein the plurality of glass frits is distributed ranging from an interfacial surface between the back electrode layer and the light absorbing layer to an interfacial surface between the light absorbing layer and the buffer layer with different concentration gradients, and wherein a distribution of the plurality of glass frits is gradually reduced as the plurality of glass frits is located away from the interfacial surface between the back electrode layer and the light absorbing layer wherein the plurality of glass frits includes a SiO2 glass frit, a SiO2-ZnO (Si—Zn—O) glass frit, a SIO2-B203 (Si—B—O) glass frit or a SiO2-Bi203 (Si—Bi—O) glass frit. |
