All 2D, high mobility, flexible, transparent thin film transistor

摘要

A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material on a substrate, providing a first electrode material on top of the semiconducting channel material, patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material, opening a window between the source metal electrode and the drain metal electrode, removing the first electrode material from the window located above the semiconducting channel material providing a gate dielectric above the semiconducting channel material, and providing a top gate above the gate dielectric, the top gate formed from a second electrode material. The semiconducting channel material is made of tungsten diselenide, the first electrode material and the second electrode material are made of graphene, and the gate dielectric is made of hexagonal boron nitride.

主权项

1. A method for manufacturing a two-dimensional thin film transistor, the method comprising:
layering a semiconducting channel material on a substrate; providing a first electrode material on top of the semiconducting channel material; patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material; opening a window between the source metal electrode and the drain metal electrode; removing the first electrode material from the window located above the semiconducting channel material; providing a gate dielectric above the semiconducting channel material; and providing a top gate above the gate dielectric, the top gate formed from a second electrode material, wherein each of the semiconducting channel material, the source metal electrode, the drain metal electrode, and the gate dielectric is comprised of one to seven atomic layers in crystalline form.