| 发明名称 |
Conductive spline for metal gates |
| 摘要 |
An integrated circuit may include a metal gate which extends over an active area and onto an isolation dielectric layer. A conductive spline is formed on the metal gate, extending on the metal gate over at least a portion of the isolation dielectric layer, and extending on the metal gate for a length at least four times a width of the metal gate. |
| 申请公布号 |
US9548384(B2) |
申请公布日期 |
2017.01.17 |
| 申请号 |
US201414282600 |
申请日期 |
2014.05.20 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
Nandakumar Mahalingam;Lytle Steve |
| 分类号 |
H01L29/78;H01L21/762;H01L29/66;H01L21/768;H01L23/485;H01L23/528;H01L29/49 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
Chan Tuenlap Daniel;Cimino Frank D. |
| 主权项 |
1. An integrated circuit, comprising:
a substrate; an isolation dielectric layer at a top surface of said substrate; an active area at said top surface of said substrate, said active area being adjacent to said isolation dielectric layer; a metal gate disposed over said substrate, said metal gate extending over at least a portion of said active area and over at least a portion of said isolation dielectric layer; and a conductive spline disposed on said metal gate, extending on said metal gate over at least a portion of said isolation dielectric layer, and extending on said metal gate at least four times a width of said metal gate. |
| 地址 |
Dallas TX US |
