发明名称 |
Method for producing semiconductor light receiving device and semiconductor light receiving device |
摘要 |
A method for producing a semiconductor light receiving device includes the steps of growing a stacked semiconductor layer on a principal surface of a substrate, the stacked semiconductor layer including a light-receiving layer having a super-lattice structure, the super-lattice structure including a first semiconductor layer and a second semiconductor layer that are stacked alternately; forming a mask on the stacked semiconductor layer; forming a mesa structure on the substrate by etching the stacked semiconductor layer using the mask so as to form a substrate product, the mesa structure having a side surface exposed in an atmosphere; forming a fluorinated amorphous layer on the side surface of the mesa structure by exposing the substrate product in fluorine plasma; and after the step of forming the fluorinated amorphous layer, forming a passivation film containing an oxide on the side surface of the mesa structure. |
申请公布号 |
US9548330(B2) |
申请公布日期 |
2017.01.17 |
申请号 |
US201514962793 |
申请日期 |
2015.12.08 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
Tsuji Yukihiro |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
Smith, Gambrell & Russell, LLP. |
代理人 |
Smith, Gambrell & Russell, LLP. |
主权项 |
1. A method for producing a semiconductor light receiving device, the method comprising the steps of:
growing a stacked semiconductor layer on a principal surface of a substrate, the stacked semiconductor layer including a light-receiving layer having a super-lattice structure, the super-lattice structure including a first semiconductor layer and a second semiconductor layer that are stacked alternately; forming a mask on the stacked semiconductor layer; forming a mesa structure on the substrate by etching the stacked semiconductor layer using the mask so as to form a substrate product, the mesa structure having a side surface exposed in an atmosphere; forming a fluorinated amorphous layer on the side surface of the mesa structure by exposing the substrate product in fluorine plasma; and after the step of forming the fluorinated amorphous layer, forming a passivation film containing an oxide on the side surface of the mesa structure. |
地址 |
Osaka JP |