发明名称 Capacitor, driving circuit comprising the capacitor, and display device comprising the driving circuit
摘要 According to exemplary embodiments of the present disclosure, a capacitor may be connected to a gate electrode of a transistor. The capacitor includes a first gate electrode connected to the gate electrode of the transistor, a gate insulation layer formed on the first gate electrode, and an upper electrode formed on the gate insulation layer. The upper electrode is formed to cover a region where the first gate electrode and the upper electrode are overlapped. The capacitor is applicable to at least one of a light emitting driving circuit and a scan driving circuit, and at least one of the light emitting driving circuit and the scan driving circuit may be included in a display device.
申请公布号 US9548025(B2) 申请公布日期 2017.01.17
申请号 US201314054125 申请日期 2013.10.15
申请人 Samsung Display Co., Ltd. 发明人 Kim Tae-Joon;Woo Min-Kyu;Kim Yang-Wan
分类号 G09G3/30;G09G3/32;H01L27/12;H01G4/005 主分类号 G09G3/30
代理机构 H.C. Park & Associates, PLC 代理人 H.C. Park & Associates, PLC
主权项 1. A light emitting driving circuit, comprising: a plurality of unit light emitting driving circuits configured to provide light emission control signals, wherein at least one of the unit light emitting driving circuits comprises: a first capacitor having a first upper electrode comprising a first terminal connected to a gate terminal of a first transistor connected to a node configured to provide a first light emission control signal, and the first transistor being configured to set the first light emission control signal to a first level according to a first light emitting clock signal received at a first lower electrode comprising a second terminal of the first capacitor;a second transistor comprising a first terminal coupled to the gate terminal of the first transistor and a second terminal configured to receive a first light emitting reset signal; anda second capacitor connected between a pate terminal of the second transistor and the first terminal of the second transistor,wherein the first upper electrode having an area greater than a first overlap area, the first overlap area being an area where the first lower electrode and the first upper electrode overlap.
地址 Yongin-si KR