| 发明名称 |
Method for fabricating contact plug in an interlayer dielectric layer |
| 摘要 |
A gate structure is first formed on a substrate and an interlayer dielectric (ILD) layer is formed around the gate structure, a dielectric layer is formed on the ILD layer and the gate structure, an opening is formed in the dielectric layer and the ILD layer, and an organic dielectric layer (ODL) is formed on the dielectric layer and in the opening. After removing part of the ODL, part of the dielectric layer to extend the opening, and then the remaining ODL, a contact plug is formed in the opening. |
| 申请公布号 |
US9548239(B2) |
申请公布日期 |
2017.01.17 |
| 申请号 |
US201514612235 |
申请日期 |
2015.02.02 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Lu Chia-Lin;Chen Chun-Lung;Chang Feng-Yi;Hung Ching-Wen;Wu Jia-Rong;Lee Yi-Hui;Wu Yi-Kuan;Liu Ying-Cheng;Huang Chih-Sen;Chen Yi-Wei |
| 分类号 |
H01L21/76;H01L21/768 |
主分类号 |
H01L21/76 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A method for fabricating semiconductor device, comprising:
providing a substrate having a gate structure thereon and an interlayer dielectric (ILD) layer around the gate structure; forming a dielectric layer on the ILD layer and the gate structure; forming an opening in the dielectric layer and the ILD layer; forming an organic dielectric layer (ODL) on the dielectric layer and in the opening; removing part of the ODL; removing part of the dielectric layer for extending the opening; removing the remaining ODL; and forming a contact plug in the opening. |
| 地址 |
Hsin-Chu TW |
