| 发明名称 | Etching method of semiconductor substrate, and method of producing semiconductor device | ||
| 摘要 | An etching method containing, at the time of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, selecting a substrate in which a surface oxygen content of the first layer is from 0.1 to 10% by mole, and applying an etching liquid containing a hydrofluoric acid compound and an oxidizing agent to the substrate and thereby removing the first layer. | ||
| 申请公布号 | US9548217(B2) | 申请公布日期 | 2017.01.17 |
| 申请号 | US201514711070 | 申请日期 | 2015.05.13 |
| 申请人 | FUJIFILM Corporation | 发明人 | Muro Naotsugu;Kamimura Tetsuya;Inaba Tadashi;Mizutani Atsushi |
| 分类号 | H01L21/461;H01L21/3213;H01L21/311;C09K13/08 | 主分类号 | H01L21/461 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC |
| 主权项 | 1. An etching method comprising: at the time of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, selecting a substrate in which a surface oxygen content of the first layer is from 0.1 to 10% by mole; and an etching rate of the first layer is 200A°/min or greater and less than 300A°/min. applying an etching liquid containing a hydrofluoric acid compound and an oxidizing agent to said substrate and thereby removing the first layer. | ||
| 地址 | Tokyo JP | ||