发明名称 |
Semiconductor devices and fabrication method thereof |
摘要 |
A method is provided for fabricating a semiconductor device. The method includes providing a substrate having a device region and a peripheral region; and forming device structures on the substrate in the device region so as to form trenches between adjacent device structures. The method also includes forming a stop layer on the substrate and the device structures; and forming a first dielectric layer on the stop layer such that a portion of the densified first dielectric layer fills the trenches and a top surface of a portion of the first dielectric layer in the peripheral region is lower than a surface of the stop layer on the device structures by a densify high aspect ratio process. Further, the method includes forming a second dielectric layer on the densified first dielectric layer; and performing a plurality of polishing processes until the top surface of the device structures is exposed. |
申请公布号 |
US9548212(B2) |
申请公布日期 |
2017.01.17 |
申请号 |
US201414571831 |
申请日期 |
2014.12.16 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
Zhao Jian;Wang Hangping |
分类号 |
H01L27/11;H01L21/3105;H01L21/02;H01L27/088;H01L21/8234 |
主分类号 |
H01L27/11 |
代理机构 |
Anova Law Group, PLLC |
代理人 |
Anova Law Group, PLLC |
主权项 |
1. A method for fabricating a semiconductor device, comprising:
providing a substrate having a device region and a peripheral region; forming a plurality of device structures on a surface of the substrate in the device region so as to form trenches between adjacent device structures; forming a stop layer on the surface of the substrate and the device structures; forming a densified first dielectric layer with an increased hardness on the stop layer such that a portion of the densified first dielectric layer fills the trenches in the device region and a top surface of a portion of the densified first dielectric layer in the peripheral region is lower than a surface of the stop layer on the top surface of the device structures by a densify high aspect ratio process; forming a second dielectric layer on the densified first dielectric layer; and performing a plurality of polishing processes onto the second dielectric layer and the densified first dielectric layer until a top surface of the device structures is exposed. |
地址 |
Shanghai CN |